SPD30N03S2L-10_08 INFINEON [Infineon Technologies AG], SPD30N03S2L-10_08 Datasheet - Page 7

• Manufacturer Part Number: SPD30N03S2L-10_08
• Description: OptiMOS Power-Transistor Feature N-Channel Enhancement mode
• Manufacturer: INFINEON [Infineon Technologies AG]

15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
160
120
100
= f (T
V
36
34
33
32
31
30
29
28
27
80
60
40
20
D
-60
0
25
= 30 A , V
SPD30N03S2L-10
= f (T
j
)
45
-20
D
=10 mA
j
)
65
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25 Ω
°C
°C
T
T
j
j
Page 7
200
185
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPD30N03S2L-10
5
Gate
D
10
= 30 A pulsed
)
15
0,2
V
20
DS max
25
SPD30N03S2L-10 G
30
0,8 V
35
02-09-2008
DS max
40
nC
Q
Gate
50