bb504cds-tl-e Renesas Electronics Corporation., bb504cds-tl-e Datasheet
bb504cds-tl-e
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bb504cds-tl-e Summary of contents
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BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise 1.0 dB typ 200 MHz, NF =1.75 dB ...
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Absolute Maximum Ratings Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to ...
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Test Circuits • DC Biasing Circuit for Operating Characteristics Items ( • 200MHz Power Gain, Noise Figure Test Circuit V T 1000p 1000p 47k Input(50Ω) L1 1000p 1SV70 36p L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns ...
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MHz Power Gain, Noise Figure Test Circuit Input L1 L3: 29 Rev.6.00 Aug 10, 2005 page RFC ...
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Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Ta (°C) Drain Current vs. Gate1 Voltage Ω 120 ...
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Power Gain vs. Gate Resistance G2S f = 900 MHz 100 200 Gate Resistance R Drain ...
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S11 Parameter vs. Frequency 1 Test Condition ...
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S Parameter S11 f(MHz) MAG. ANG. 50 1.000 -3.3 100 0.993 -7.2 150 0.991 -10.9 200 0.984 -15.0 250 0.978 -19.0 300 0.970 -22.8 350 0.958 -26.7 400 0.954 -30.3 450 0.945 -33.8 500 0.932 -37.5 550 0.920 -40.6 600 ...
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... A-A Section B-B Section Ordering Information Part Name BB504CDS-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Aug 10, 2005 page Package Name MASS[Typ.] CMPAK-4(T) / CMPAK-4(T)V ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...