NTD20P06L-1 ONSEMI [ON Semiconductor], NTD20P06L-1 Datasheet - Page 3

• Manufacturer Part Number: NTD20P06L-1
• Description: Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK
• Manufacturer: ONSEMI [ON Semiconductor]

0.45
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
40
35
30
25
20
15
10
5
0
0
2
1
0
−50
0
0
Figure 3. On−Resistance versus Drain Current
V
I
V
V
D
V
GS
GS
GS
GS
= −7.5 A
V
V
−25
1
Figure 5. On−Resistance Variation with
GS
= −7 V
= −5 V
GS
= −8 V
Figure 1. On−Region Characteristics
−V
= −5 V
= −9 V
5
= −10 V
DS
T
2
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
−I
3
D
10
, DRAIN CURRENT (A)
and Temperature
25
Temperature
4
T
J
= 125°C
T
50
T
15
5
J
J
= −55°C
= 25°C
TYPICAL PERFORMANCE CURVES
6
75
20
(T
7
J
100
V
V
V
V
= 25°C unless otherwise noted)
V
V
V
GS
GS
GS
GS
GS
GS
GS
8
http://onsemi.com
T
25
= −6 V
= −4 V
= −3 V
= −5.5 V
J
= −3.5 V
= −4.5 V
= −5 V
125
= 25°C
9
10
30
150
3
10000
0.225
0.175
0.125
0.075
0.025
1000
0.25
0.15
0.05
100
0.2
0.1
40
30
20
10
10
0
0
1
5
0
0
Figure 4. On−Resistance versus Drain Current
V
T
Figure 6. Drain−to−Source Leakage Current
GS
J
10
= 25°C
1
= 0 V
−V
3
−V
Figure 2. Transfer Characteristics
15
DS
DS
, GATE−TO−SOURCE VOLTAGE (V)
T
2
, DRAIN−TO−SOURCE VOLTAGE (V)
J
6
T
20
= 25°C
−I
J
= −55°C
D
, DRAIN CURRENT (A)
and Gate Voltage
3
25
versus Voltage
V
9
V
GS
GS
T
T
J
J
30
= −5 V
4
= −10 V
= 150°C
= 125°C
12
35
5
15
40
6
45
T
18
J
VDS w 10 V
7
= 125°C
50
21
8
55 60
24
9