RFD8P06ESM INTERSIL [Intersil Corporation], RFD8P06ESM Datasheet - Page 2

• Manufacturer Part Number: RFD8P06ESM
• Description: 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
• Manufacturer: INTERSIL [Intersil Corporation]

Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . .ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 3)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Diode Reverse Recovery Time
1. T
2. Pulse test: pulse width
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C.
GS
= 20K ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
4-118
300 s, duty cycle
T
C
= 25
T
C
o
= 25
RFD8P06E, RFD8P06ESM, RFP8P06E
C, Unless Otherwise Specified
o
C
SYMBOL
V
Q
r
SYMBOL
2%.
BV
t
Q
Q
DS(ON)
t
d(OFF)
C
C
GS(TH)
R
I
d(ON)
C
R
I
t
g(TOT)
DSS
GSS
t
g(-10)
OFF
g(TH)
OSS
RSS
V
ON
ISS
DSS
t
t
t
r
f
JC
JA
SD
rr
I
V
V
V
V
I
V
R
(Figure 13)
V
V
V
V
f = 1MHz
Figure 12
TO-220
TO-251, TO-252
D
D
GS
DS
DS
GS
DD
GS
GS
GS
DS
L
I
I
= 250 A, V
= 8A, V
SD
SD
= 3.75 , V
= V
= Rated BV
= 0.8 x Rated BV
= 20V
= -30V, I
= 0 to -20V
= 0 to -10V
= 0 to -2V
= -25V, V
= -8A
= -8A, dI
DS
GS
TEST CONDITIONS
, I
TEST CONDITIONS
D
= -10V
D
GS
GS
GS
SD
= 250 A
DSS
= 0V
8A,
= -10V, R
/dt = -100A/ s
= 0V,
V
R
I
, V
g(REF)
J
DD
L
DSS
, T
GS
= 6
DGR
DSS
STG
= -48V, I
pkg
DM
GS
AS
, T
= 0V
G
D
D
L
= -1.45mA
C
= 2.5
RFD8P06E, RFD8P06ESM, RFP8P06E
= 150
D
Refer to Peak Current Curve
= 8A,
o
C
Refer to UIS Curve
MIN
-55 to 175
-
-
0.32
300
260
-60
-60
48
20
8
2
MIN
-2.0
-60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
TYP
1.15
600
160
15
30
40
25
30
15
35
-
-
-
-
-
-
-
-
-
-
-
MAX
-1.5
125
0.300
3.125
MAX
-4.0
-1.0
100
100
-25
1.5
70
36
18
62
10
-
-
-
-
-
-
-
-
UNITS
W/
UNITS
o
o
o
kV
W
UNITS
V
V
V
A
A
o
o
o
C
C
C
o
ns
C/W
C/W
C/W
nC
nC
nC
V
C
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
A
A
A