h10330a-25 Hamamatsu Photonics, K.K.,, h10330a-25 Datasheet - Page 2

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h10330a-25

Manufacturer Part Number
h10330a-25
Description
Thermoelectric Cooled Nir-pmt Module
Manufacturer
Hamamatsu Photonics, K.K.,
Datasheet
GENERAL
1 No condensation
MAXIMUM RATING
CHARACTERISTICS
2 At 1100 nm (H10330A-25), at 1300 nm (H10330A-45), at 1500 nm (H10330A-75)
3 At 30 minutes after high voltage is applied with shutter closed and anode radiant sensitivity = 10000 A/W.
MODULE, CONTROLLER
4 At 1300 nm
5 Excluding projections.
Spectral Response
Photocathode Material
Detection Area for Collimated Light
Effective Area of PMT
PMT Operating Temperature
PMT Operating Guaranteed Voltage
Operating Ambient Temperature
Operating Ambient Humidity
Storage Temperature
Storage Humidity
PMT Supply Voltage
Average PMT Anode Current
Cathode
Sensitivity
Anode sensitivity
Gain
Anode Dark Current
Anode Dark Count
Time
Response
Cooling Method
Condenser Lens Material
Diameter of the Condenser Lens (Effective Area)
F Number of the Condenser Lens (Focal length)
Cooling Time Required for Operation
Protection Function
Input Voltage (AC)
Dimensions (W × H × D)
Weight
SPECIFICATIONS
2
Parameter
Parameter
Parameter
Parameter
Anode Pulse Rise Time
Anode Pulse Fall Time
Transit Time Spread
2
1
3
Quantum Efficiency
Radiant
Radiant
2 3
5
Module
Controller
Module
Controller
(at -800 V, -60 °C)
1
4
5 × 10
4500
Min.
1
9
InP/InGaAsP
5
H10330A-25
H10330A-25
H10330A-25
950 to 1200
1 × 10
2 × 10
18000
Typ.
0.4
0.9
1.7
0.4
18
2
High Voltage Interlock for Inappropreate Temperature
6
3
Max.
BK7 AR Coating (λ 900 nm to 1700 nm)
1
Thermoelectric (Forced Air Cooling)
100 to 240 (±10 %) (50 Hz / 60 Hz)
5 × 10
5000
Min.
10
Value / Description
1
102 × 131 × 279.5
100 × 186 × 150
InP/InGaAsP
H10330A-45
Less than 80
Less than 80
H10330A-45
H10330A-45
5
-500 to -900
950 to 1400
1.4 (f=25.7)
Approx. 2.1
Approx. 2.0
Approx. 20
-20 to +50
+5 to +40
1 × 10
2 × 10
21000
20 ( 18)
-900
Typ.
-60
0.9
1.7
0.4
21
1.6
18
1
2
4
6
4
Max.
10
5 × 10
6000
Min.
12
1
5
H10330A-75
H10330A-75
H10330A-75
950 to 1700
InP/InGaAs
1 × 10
2 × 10
24000
Typ.
0.9
1.7
0.4
24
40
2
6
5
Max.
100
mA/W
Unit
Unit
Unit
A/W
Unit
mm
mm
mm
min
mm
nm
µA
nA
°C
°C
°C
s
ns
ns
ns
kg
%
%
%
V
V
V
-1

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