k9k1208u0c-j Samsung Semiconductor, Inc., k9k1208u0c-j Datasheet - Page 21

• Manufacturer Part Number: k9k1208u0c-j
• Description: 64m X 8 Bit , 32m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

Input Data Latch Cycle
Serial Access Cycle after Read
K9K1208Q0C
K9K1208D0C
K9K1208U0C
ALE
CLE
CE
WE
CE
RE
R/B
I/Ox
I/Ox
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
t
K9K1216Q0C
K9K1216D0C
K9K1216U0C
ALS
NOTES : Transition is measured 200mV from steady state voltage with load.
t
RR
t
WP
t
DS
DIN 0
t
t
WC
This parameter is sampled and not 100% tested.
REA
(CLE=L, WE=H, ALE=L)
t
DH
t
t
RP
WH
Dout
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
21
t
DH
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
Dout
t
RHZ*
t
WP
t
DIN n
DS
t
DH
t
CH
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
CHZ*
RHZ*
t
OH
t
OH