MRF6S23100HR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF6S23100HR3_06 Datasheet - Page 5

• Manufacturer Part Number: MRF6S23100HR3_06
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
18
17
16
15
14
13
12
0.1
I
DQ
1250 mA
1000 mA
= 1500 mA
Figure 5. Two - Tone Power Gain versus
750 mA
500 mA
P
out
, OUTPUT POWER (WATTS) PEP
1
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P
Output Power
V
f2 = 2355 MHz, Two−Tone Measurements
10 MHz Tone Spacing
DD
= 28 Vdc, f1 = 2345 MHz
15.8
15.6
15.4
15.2
14.8
14.6
14.4
15.2
15.1
14.9
14.8
14.7
14.6
14.5
14.4
14.3
14.2
16
15
15
2300
2300
10
2310
2310
G
η
η
ps
ACPR
ACPR
D
D
2320
2320
TYPICAL CHARACTERISTICS
G
ps
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing
2330
2330
DD
DD
100
IM3
= 28 Vdc, P
= 28 Vdc, P
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
2340
2340
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
300
IRL
2350
2350
out
out
IM3
= 40 W (Avg.), I
= 20 W (Avg.), I
2360
2360
IRL
2370
2370
−10
−20
−30
−40
−50
−60
−70
0
0.1
Figure 6. Third Order Intermodulation Distortion
DQ
2380 2390
DQ
2380 2390
V
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
DD
= 1000 mA
= 1000 mA
I
DQ
= 28 Vdc
= 500 mA
2400
2400
P
out
out
out
25.4
24.8
24.2
23.6
−35
−37
−39
−41
−43
35.5
35
34.5
34
35.5
−25
−27
−29
−31
−33
−35
MRF6S23100HR3 MRF6S23100HSR3
1
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 20 Watts Avg.
= 40 Watts Avg.
750 mA
−12
−15
−18
−21
−12
−14
−16
−18
−20
−24
−22
1500 mA
10
1000 mA
1250 mA
100
300
5