SI3200-X-FS SILABS [Silicon Laboratories], SI3200-X-FS Datasheet - Page 37
SI3200-X-FS
Manufacturer Part Number
SI3200-X-FS
Description
Manufacturer
SILABS [Silicon Laboratories]
Datasheet
1.SI3200-X-FS.pdf
(112 pages)
- Current page: 37 of 112
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Parameter
Loop Voltage Sense
(V
TIP Voltage Sense
RING Voltage Sense
Loop Current Sense
Battery Voltage Sense
Longitudinal Current
Sense
External Ringing Gen-
erator Voltage Sense
External Ringing Gen-
erator Current Sense
*Note: I
TIP
– V
approximately 500 µA.
R6*gain
LOOP
RBQ6
RING
ITIPN
Q10
and I
)
Q4
1.74k
LONG
Table 20. Register and RAM Locations Used for Loop Monitoring
Figure 18. Discrete Linefeed Circuit for Power Monitoring
are calculated values based on measured I
Q8
Register/RAM
Mnemonic
VRNGNG
IRNGNG
VLOOP
VRING
ILONG
ILOOP
VBAT
VTIP
ITIPP
Q1
Q6
82.5
R6
VRNGNG[15:0]
Register/RAM
IRNGNG[15:0]
TIP
VLOOP[15:0]
VRING[15:0]
ILOOP[15:0]
ILONG[15:0]
VBAT[15:0]
VTIP[15:0]
Bits
Rev. 1.2
RING
Q1
82.5
R7
Q2
Q5
64.07 to 160.173 V
64.07 to 160.173 V
64.07 to 160.173 V
–I
Q4
0 to 101.09 mA
0 to 101.09 mA
Measurement
0 to 160.173 V
0 to 64.07 V
0 to 64.07 V
0 to 64.07 V
IRINGP
0 to 63.3 V
662.83 mA
currents. The resulting effective resolution is
332.04 V
Range
Q7
10.172 mV
LSB Size
4.907 mV
4.907 mV
4.907 mV
4.907 mV
3.097 µA
3.097 µA
1.74k
20.3 µA
Q3
Si3220/25
Q9
IRINGN
RBQ5
R7*gain
Resolution
Effective
500 µ A*
500 µA*
251 mV
628 mV
251 mV
628 mV
251 mV
628 mV
251 mV
628 mV
1.302 V
2.6 mA
VBAT
37
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