AD660SQ/883B AD [Analog Devices], AD660SQ/883B Datasheet - Page 3

• Manufacturer Part Number: AD660SQ/883B
• Description: Monolithic 16-Bit Serial/Byte DACPORT
• Manufacturer: AD [Analog Devices]

AC PERFORMANCE CHARACTERISTICS
Ratio, these characteristics are included for design guidance only and are not subject to test. THD+N and SNR are 100% tested.
T
Parameter
Output Settling Time
Total Harmonic Distortion + Noise
Signal-to-Noise Ratio
Digital-to-Analog Glitch Impulse
Digital Feedthrough
Output Noise Voltage
Reference Noise
Specifications subject to change without notice.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD660 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS*
V
V
V
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs (Pins 5 through 23) to DGND . . . . . . –1.0 V to
REF IN to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5 V
Span/Bipolar Offset to AGND . . . . . . . . . . . . . . . . . . . 10.5 V
Power Dissipation (Any Package)
Storage Temperature . . . . . . . . . . . . . . . . . . . –65 C to +150 C
Lead Temperature Range
*Stresses above those listed under “Absolute Maximum Ratings” may cause
MIN
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
REV. A
CC
EE
LL
(Time to 0.0008% FS
with 2 k , 1000 pF Load)
A, B, S Grade
A, B, S Grade
A, B, S Grade
Density (1 kHz – 1 MHz)
Ref Out, V
(Soldering 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +300 C
To +60 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000 mW
Derates above +60 C . . . . . . . . . . . . . . . . . . . . 8.7 mW/ C
to AGND . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17.0 V
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
to AGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17.0 V
T
A
T
MAX
OUT
, V
CC
= +15 V, V
. . . . . . . Indefinite Short to AGND, DGND,
EE
= –15 V, V
LL
Limit
13
8
10
6
8
2.5
0.009
0.056
5.6
83
15
2
120
125
= +5 V except where noted.)
V
CC
, V
EE
Units
% max
% max
% max
dB min
nV-s typ
nV-s typ
nV/ Hz typ
nV/ Hz typ
s max
s typ
s typ
s typ
s typ
s typ
, and V
+7.0 V
(With the exception of Total Harmonic Distortion + Noise and Signal-to-Noise
1 V
LL
–3–
DB1, 9, MSB/LSB
20 V Step, T
20 V Step, T
20 V Step, T
10 V Step, T
10 V Step, T
1 LSB Step, T
0 dB, 990.5 Hz; Sample Rate = 96 kHz; T
–20 dB, 990.5 Hz; Sample Rate = 96 kHz; T
T
Test Conditions/Comments
–60 dB, 990.5 Hz; Sample Rate = 96 kHz; T
DAC Alternately Loaded with 8000
DAC Alternately Loaded with 0000
Measured at V
Measured at REF OUT
A
DB0, 8, SIN
= +25 C
DB7, 15
DB6, 14
DB5, 13
DB4, 12
DB2, 10
DB3, 11
DGND
+V
–V
+V
CC
EE
LL
PIN CONFIGURATION
A
A
MIN
A
MIN
10
11
12
1
4
9
2
3
5
7
8
6
MIN
= +25 C
= +25 C
= +25 C
OUT
(Not to Scale)
TOP VIEW
; 20 V Span; Excludes Reference
AD660
T
T
A
A
T
A
T
T
T
MAX
MAX
MAX
19
18
15
13
24
23
17
16
14
22
21
20
WARNING!
SPAN,
BIPOLAR OFFSET
AGND
REF OUT
REF IN
V
CLR
SER
LBE, UNI/BIP CLEAR
S
LDAC
HBE
CS
OUT
OUT
H
H
and 7FFF
and FFFF
ESD SENSITIVE DEVICE
A
= +25 C
AD660
A
A
= +25 C
= +25 C
H
H
; CS High