BAS21L ONSEMI [ON Semiconductor], BAS21L Datasheet - Page 2

• Manufacturer Part Number: BAS21L
• Description: High Voltage Switching Diode
• Manufacturer: ONSEMI [ON Semiconductor]

THERMAL CHARACTERISTICS (SOT−23)
THERMAL CHARACTERISTICS (SC−88A)
2. FR−5 = 1.0
3. Alumina = 0.4
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS
Thermal Resistance
Junction−to−Ambient (SOT−23)
Power Dissipation (Note 4)
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
Operating Junction and Storage Temperature Range
Total Device Dissipation FR−5 Board
Total Device Dissipation Alumina Substrate
Thermal Resistance Junction−to−Ambient
Junction and Storage
Temperature Range
Maximum Junction Temperature
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Diode Capacitance (V
Reverse Recovery Time (I
(Note 2)
T
Derate above 25°C
(Note 3)
T
Derate above 25°C
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
A
A
BR
BR
BR
F
F
R
R
R
R
R
R
= 25°C
= 25°C
= 100 mAdc)
= 200 mAdc)
= 100 Vdc)
= 150 Vdc)
= 200 Vdc)
= 100 Vdc, T
= 150 Vdc, T
= 200 Vdc, T
= 100 mAdc)
= 100 mAdc)
= 100 mAdc)
0.75
J
J
J
0.3
= 150°C)
= 150°C)
= 150°C)
R
= 0, f = 1.0 MHz)
0.062 in.
F
0.024 in. 99.5% alumina.
= I
Characteristic
R
Characteristic
Characteristic
= 30 mAdc, I
(T
A
= 25°C unless otherwise noted)
R(REC)
= 3.0 mAdc, R
BAS19, NSVBAS19
BAS19, NSVBAS19
http://onsemi.com
SBAS21DW5
BAS20, SBAS20
BAS21, SBAS21
BAS20, SBAS20
BAS21, SBAS21
BAS20, SBAS20
BAS21, SBAS21
L
2
= 100)
BAS19
Symbol
Symbol
Symbol
T
T
T
V
R
R
R
J
J
P
P
P
Jmax
, T
, T
C
V
(BR)
qJA
qJA
qJA
I
t
R
rr
D
D
D
D
F
stg
stg
−55 to +150
−55 to +150
Min
120
200
250
−
−
−
−
−
−
−
−
−
−
Max
Max
225
556
300
417
385
328
150
1.8
2.4
3.0
Max
1.25
100
100
100
0.1
0.1
0.1
1.0
5.0
50
−
−
−
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
Unit
Unit
mW
mW
mW
°C
°C
°C
mAdc
Unit
Vdc
Vdc
pF
ns