emh2801 Sanyo Semiconductor Corporation, emh2801 Datasheet - Page 4

• Manufacturer Part Number: emh2801
• Description: Mosfet P-channel Silicon Mosfet Sbd Schottky Barrier Diode
• Manufacturer: Sanyo Semiconductor Corporation

0.001
0.01
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
1.0
0.1
1.2
1.0
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
0
0
V DS = --10V
I D = --3A
Sine wave
Rectangular
wave
0.05
θ
180°
360°
0.5
360°
20
0.10
0.5
1.0
Average Output Current, I O -- A
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
0.15
Forward Voltage, V F -- V
1.5
P F (AV) -- I O
When mounted on ceramic substrate
(900mm
60
V GS -- Qg
0.20
1.0
P D -- Ta
(1)Rectangular wave θ =60 °
(2)Rectangular wave θ =120 °
(3)Rectangular wave θ =180 °
(4)Sine wave θ =180 °
I F -- V F
2.0
0.25
80
(1)
2
×0.8mm)
2.5
0.30
1.5
100
3.0
0.35
(2)
120
3.5
0.40
(4)
2.0
[MOSFET]
[MOSFET]
140
(3)
4.0
0.45
IT14541
IT15909
IT12192
IT12194
[SBD]
[SBD]
0.50
160
4.5
2.5
EMH2801
--0.01
0.0014
0.0012
0.0010
0.0008
0.0006
0.0004
0.0002
1.0E+05
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
1.0E-01
--1.0
--0.1
--10
--0.01
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
(1)Rectangular wave θ =300 °
(2)Rectangular wave θ =240 °
(3)Rectangular wave θ =180 °
(4)Sine wave θ =180 °
Ta=25° C
Single pulse
When mounted on ceramic substrate (900mm
Rectangular
wave
Sine wave
2 3
2
2
Drain-to-Source Voltage, V DS -- V
Average Reverse Voltage, V R -- V
5 7
V R
Operation in this area
is limited by R DS (on).
4
V R
4
--0.1
Reverse Voltage, V R -- V
180°
P R (AV) -- V R
θ
360°
2 3
6
6
I R -- V R
A S O
360°
5 7
8
8
--1.0
10
10
2 3
2
×0.8mm) 1unit
12
12
5
[MOSFET]
No. A1821-4/5
7
--10
14
14
IT15908
IT12193
IT12195
[SBD]
[SBD]
(3)
(4)
(1)
(2)
2
16
16
3