buk7520-55 NXP Semiconductors, buk7520-55 Datasheet - Page 3

• Manufacturer Part Number: buk7520-55
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
AVALANCHE LIMITING VALUE
April 1998
TrenchMOS
Standard level FET
SYMBOL PARAMETER
W
ID% = 100 I
DSS
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
D 25 ˚C
40
40
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
mb
D
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
10 V
= 45 A; V
= 10 V; R
3
DD
GS
25 V;
= 50 ; T
ID/A
1000
100
I
0.001
10
D
0.01
1
0.1
& I
10
1
Fig.3. Safe operating area. T
1
Fig.4. Transient thermal impedance.
Zth/(K/W)
DM
0.5
0.2
0.1
0.05
0.02
0
RDS(ON) =VDS/ID
1E-06
mb
Z
= f(V
th j-mb
= 25 ˚C
DS
= f(t); parameter D = t
); I
0.0001
DM
DC
MIN.
single pulse; parameter t
-
10
0.01
t/s
TYP.
P
D
-
Product specification
VDS/V
t
p
BUK7520-55
mb
T
1
MAX.
= 25 ˚C
p
D =
/T
110
T
t
p
t
Rev 1.100
10ms
tp =
1 us
10us
100 us
1 ms
100ms
100
UNIT
100
mJ
p