tpcp8301 TOSHIBA Semiconductor CORPORATION, tpcp8301 Datasheet - Page 6

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tpcp8301

Manufacturer Part Number
tpcp8301
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos??
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
−100
−0.1
−10
−1
−0.1
I D max (Pulse) *
* Single pulse
Curves must be derated
linearly with increase in
temperature.
Single-device value at dual
operation (Note 3b)
Ta = 25°C
Drain−source voltage V
1000
100
10
Safe operating area
0.001
−1
1
10 ms *
1 ms *
0.01
−10
DS
V DSS max
(V)
0.1
−100
Pulse width t
r
th
6
− t
1
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
w
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
w
(s)
10
100
単発パルス
(4)
(3)
(2)
(1)
1000
TPCP8301
2006-11-17

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