tpcp8301 TOSHIBA Semiconductor CORPORATION, tpcp8301 Datasheet - Page 4

• Manufacturer Part Number: tpcp8301
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos??
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−10
−12
−10
100
−8
−6
−4
−2
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
Common source
V DS = −10 V
Pulse test
−8
−6
−10
Drain−source voltage V
−0.4
Gate−source voltage V
−0.2
Ta = −55°C
Drain current I
−0.8
−3
−4
−0.4
I
I
|Y
D
D
fs
– V
– V
−1.2
−2.5
−1
| – I
25
−2.0
DS
GS
25
100
−0.6
D
D
Common source
Ta = 25°C
Pulse test
−1.6
Ta = −55°C
100
GS
(A)
DS
Common source
V DS = 10 V
Pulse test
V GS = −1.4 V
−0.8
−2.0
(V)
(V)
−1.8
−1.6
−2.4
−1.0
−10
4
1000
−0.1
−0.6
−0.5
−0.4
−0.3
−0.2
−20
−16
−12
100
10
−8
−4
−0.1
0
0
0
0
Common source
Ta = 25°C
Pulse test
−8
−1.3
−10
Drain-source voltage V
Gate−source voltage V
−0.4
−2
Drain current I
−6
−4
R
−0.8
−4
V
DS (ON)
I
DS
D
−2.5
– V
−3
−2.6
−1
– V
−2.8
DS
−1.2
GS
– I
−6
D
D
Common source
Ta = 25°C
Pulse test
−2.4
Common source
Ta = 25°C
Pulse test
GS
DS
(A)
V GS = −1.4 V
V GS = −2 V
−1.6
−8
I D = −5 A
(V)
(V)
TPCP8301
−2.2
−2.5
−4.5
2006-11-17
−2.0
−1.6
−1.8
−2.0
−10
−10