mt16htf25664ay-80e Micron Semiconductor Products, mt16htf25664ay-80e Datasheet - Page 8

• Manufacturer Part Number: mt16htf25664ay-80e
• Description: 512mb, 1gb, 2gb, 4gb X64, Dr 240-pin Ddr2 Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Electrical Specifications
Table 9:
Input Capacitance
Component AC Timing and Operating Conditions
Table 10:
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64A.fm - Rev. F 8/07 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
/V
T
OZ
I
C
A
I
1
DD
OUT
Q
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM component case operating
temperature
Module and Component Speed Grades
DD
REF
REF
/V
input 0V ≤ V
leakage current; V
Module Speed Grade
Notes:
DD
Q supply voltage relative to V
2
-1GA
Stresses greater than those listed in Table 9 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated in the device data sheet are not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. Refresh rate is required to double when 85°C < T
2. For further information, refer to technical note
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations. JEDEC modules are currently designed using
simulations to close timing budgets.
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades as shown Table 10.
-80E
-800
-667
-53E
-40E
IN
on Micron’s Web site.
≤ 0.95V (All other pins not under
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM
REF
= valid V
OUT
SS
≤ V
REF
SS
DD
level
IN
Q; DQs and
≤ V
DD
8
;
Address inputs
RAS#, CAS#, WE#, BA
S#, CKE, ODT
CK0, CK0#
CK1, CK1#, CK2, CK2#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Component Speed Grade
TN-00-08: Thermal Applications,
C
≤ 95°C.
-187E
Electrical Specifications
-25E
-37E
-25
-5E
-3
Min
–0.5
–0.5
–80
–40
–20
–30
–10
–10
–32
–40
–40
©2003 Micron Technology, Inc. All rights reserved.
0
0
Max
+2.3
+2.3
+80
+40
+20
+30
+10
+10
+32
+70
+85
+85
+95
available
Units
µA
µA
µA
°C
°C
°C
°C
V
V