si7450dp-t1 Vishay, si7450dp-t1 Datasheet - Page 4

• Manufacturer Part Number: si7450dp-t1
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

Si7450DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71432.
www.vishay.com
4
-0.5
-1.0
-1.5
1.0
0.5
0.0
0.01
0.01
0.1
0.1
-50
2
1
2
1
10
10
- 4
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
-25
Single Pulse
Single Pulse
0
Threshold Voltage
T
J
- Temperature (
10
25
0.02
- 3
50
10
0.05
I
- 3
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Case
˚
C)
10
100
- 2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
150
- 2
10
- 1
100
10
80
60
40
20
1
0
0.001
- 1
Single Pulse Power, Junction-to-Ambient
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
- T
t
1
1
A
= P
0.1
t
S-51773-Rev. D, 31-Oct-05
2
Document Number: 71432
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 68
1
˚
C/W
1 0
600
10