si7450dp-t1 Vishay, si7450dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7450dp-t1
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 71432
S-51773-Rev. D, 31-Oct-05
0.20
0.15
0.10
0.05
0.00
50
10
20
16
12
1
8
4
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 4.0 A
0.2
On-Resistance vs. Drain Current
= 100 V
V
8
SD
15
T
Q
J
g
- Source-to-Drain Voltage (V)
= 150
0.4
V
I
D
- Total Gate Charge (nC)
GS
Gate Charge
- Drain Current (A)
16
= 6 V
˚
C
0.6
30
24
0.8
V
T
45
GS
J
= 25
32
= 10 V
1.0
˚
C
1.2
40
60
2500
2000
1500
1000
0.25
0.20
0.15
0.10
0.05
0.00
500
2.5
2.0
1.5
1.0
0.5
0.0
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 4.0 A
C
= 10 V
rss
40
2
T
V
V
0
J
DS
GS
- Junction Temperature (
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
80
4
50
C
C
Vishay Siliconix
oss
iss
120
I
D
6
75
= 4.0 A
Si7450DP
www.vishay.com
˚
100
C)
160
8
125
150
200
10
3