ips118n10ng Infineon Technologies Corporation, ips118n10ng Datasheet - Page 7

• Manufacturer Part Number: ips118n10ng
• Description: Optimos 2 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
115
110
105
100
1
95
90
AV
1
-60
=f(T
); R
j
GS
); I
j(start)
=25 Ω
-20
D
=1 mA
150 °C
10
20
t
T
AV
j
60
[µs]
[°C]
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=75 A pulsed
g s
10
20
Q
Q
gate
g
Q
sw
[nC]
Q
20 V
30
g d
IPS118N10N G
50 V
40
80 V
Q
g ate
2008-11-19
50