m58lw032d STMicroelectronics, m58lw032d Datasheet - Page 19

• Manufacturer Part Number: m58lw032d
• Description: 32 Mbit 4mb X8, 2mb X16, Uniform Block 3v Supply Flash Memory
• Manufacturer: STMicroelectronics

Table 8. Byte-Wide Read Protection Register
Table 9. Program, Erase Times and Program Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
Block (1Mb) Erase
Chip Program (Write to Buffer)
Chip Erase Time
Program Write Buffer
Word/Byte Program Time
(Word/Byte Program command)
Program Suspend Latency Time
Erase Suspend Latency Time
Block Protect Time
Blocks Unprotect Time
Program/Erase Cycles (per block)
Data Retention
Word
Lock
Lock
C
D
A
B
E
F
0
1
2
3
4
5
6
7
8
9
2. Sampled, but not 100% tested.
3. Effective byte programming time 6µs, effective word programming time 12µs.
4. Maximum value measured at worst case conditions for both temperature and V
5. Maximum value measured at worst case conditions for both temperature and V
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory, User
Factory, User
Parameters
User
User
User
User
User
User
User
User
Use
A8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A7
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
100,000
Min
20
A6
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
M58LW032D
A5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Typ
192
0.75
1.2
24
37
16
18
DD
DD
1
1
(1,2)
(3)
.
after 100,000 program/erase cycles.
A4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
A3
Max
110
576
1.2
4.8
48
20
25
30
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
72
(4)
(4)
(4)
(5)
(5)
(5)
(5)
(4)
(2)
(4)
M58LW032D
A2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
cycles
years
Unit
µs
µs
µs
µs
µs
s
s
s
s
A1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
19/50