mt4jtf6464ay-1g1 Micron Semiconductor Products, mt4jtf6464ay-1g1 Datasheet - Page 10

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mt4jtf6464ay-1g1

Manufacturer Part Number
mt4jtf6464ay-1g1
Description
512mb X64, Sr 240-pin Ddr3 Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 12:
PDF:09005aef82b2263f/Source:09005aef82b22627
JTF4C_64x64AY.fm - Rev. A 7/07 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
0
1
2
3
4
5
6
7
8
9
CRC coverage
EEPROM device size
Number of SPD bytes written
SPD revision
DRAM device type (technology)
Module type (form factor)
SDRAM device density and internal banks
SDRAM device addressing (row and column counts)
Reserved
Module organization (module ranks, SDRAM device width)
Module memory bus width
Fine time base (FTB) dividend/divisor
Medium time base (MTB) dividend
Medium time base (MTB) divisor
SDRAM devise minimum cycle time (
Reserved
CAS latencies supported, low byte
CAS latencies supported, high byte
MIN CAS latency time (
MIN write recovery time (
MIN RAS# to CAS# delay time (
MIN row active-to-row active delay time (
MIN row precharge delay time (
Upper nibble for
MIN active-to-precharge delay time (
Serial Presence-Detect Matrix
t
RAS and
t
AA [MIN])
t
WR [MIN])
t
RC
Description
t
RCD [MIN])
t
RP [MIN])
t
t
CK [MIN])
RAS [MIN]), LSB
t
RRD [MIN])
512MB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-1G4/-1G3/-1G1/-1G0
-1G1/-1G0/-80C/-80B
-1G1/-1G0/-80C/-80B
Entry (Version)
1 rank, x16 I/O
No ECC, 64-bit
DDR3 SDRAM
1Gb/8 banks
Bytes 0–116
-1G4/-1G3
-1G4/-1G3
256 bytes
176 bytes
-80C/-80B
UDIMM
Rev 1.0
(13, 10)
-1G4
-1G3
-1G1
-1G0
-1G4
-1G3
-1G1
-1G0
-1G4
-1G3
-1G1
-1G0
-1G4
-1G3
-1G1
-1G0
-80C
-80B
-80C
-80B
-80C
-80B
-80C
-80B
Serial Presence-Detect
5/2
0
1
8
0
0
©2007 Micron Technology, Inc. All rights reserved.
512MB
0B
1C
6C
6C
3C
6C
2C
92
10
02
02
09
00
02
03
52
01
08
0F
14
00
34
54
14
06
04
00
78
69
78
64
78
78
78
69
78
64
78
50
78
69
78
64
78
11
20

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