mt46h16m16lf Micron Semiconductor Products, mt46h16m16lf Datasheet - Page 47
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mt46h16m16lf
Manufacturer Part Number
mt46h16m16lf
Description
256mb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H16M16LF.pdf
(79 pages)
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PRECHARGE
Figure 32:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 3/08 EN
PRECHARGE Command
Notes:
The PRECHARGE command (Figure 32) is used to deactivate the open row in a partic-
ular bank or the open row in all banks. The bank(s) will be available for a subsequent row
access some specified time (
determines whether one or all banks are to be precharged. In the case where only one
bank is to be precharged (A10 = LOW), inputs BA0–BA1 select the bank. When all banks
are to be precharged (A10 = HIGH), inputs BA0–BA1 are treated as a “Don’t Care.” After a
bank has been precharged, it is in the idle state and must be activated prior to any READ
or WRITE commands being issued to that bank.
BA0, BA1
1. BA = bank address.
2. A10 = 1 HIGH, all banks to be precharged, BA1, BA0 are “Don’t Care.”
3. A10 = 0 LOW, only bank selected by BA1 and BA0 will be precharged.
4. i = the most significant column address bit for each configuration.
A0–A9,
A11–Ai
RAS#
CAS#
WE#
CKE
A10
CK#
CS#
CK
HIGH
Single
Don’t Care
All
BA
t
RP) after the PRECHARGE command is issued. Input A10
47
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
©2005 Micron Technology, Inc. All rights reserved.
Operations