sg50n06d3s Sirectifier Semiconductors, sg50n06d3s Datasheet - Page 2

• Manufacturer Part Number: sg50n06d3s
• Description: Discrete Igbts
• Manufacturer: Sirectifier Semiconductors

Reverse Diode (FRED)
Symbol
Symbol
R
R
C
t
C
R
C
t
t
t
Q
Q
E
E
E
I
d(off)
d(on)
d(on)
d(off)
thCK
g
Q
thJC
V
RM
I
oes
t
t
t
t
t
thJC
ies
res
off
on
off
ge
gc
R
ts
ri
fi
ri
fi
rr
F
g
I
Pulse test, t 300us, duty cycle 2%
V
I
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
I
Pulse test, t
I
I
T
T
C
C
C
C
F
F
F
CE
CE
CE
VJ
VJ
=I
=I
=I
=I
=60A; T
=I
=1A; -di/dt=50A/us; V
=25
=150
C90
C90
=25V; V
C90
C90
=0.8V
C90
=0.8V
SG50N06D2S, SG50N06D3S
CE
CE
; V
; V
; V
; V
; V
(Clamp)
(Clamp)
o
C; V
o
CE
GE
GE
GE
C
VJ
CES
CES
GE
=150
=10V
=15V; V
=15V; L=100uH
=15V; L=100uH
GE
G
G
=0V; -di
R
; R
; R
=V
=0V; f=1MHz
300us, duty cycle d
G
G
RRM
J
J
o
=R
=R
=25
=125
Test Conditions
C
Test Conditions
0.8V
0.8V
CE
off
off
F
o
/dt=100A/us; V
=2.7
=2.7
=0.5V
C
o
CES'
CES'
C
R
=30V; T
higher T
higher T
CES
Discrete IGBTs
J
=25
J
J
2%; T
R
o
or
or
=540V
C
VJ
=25
o
C
min.
min.
35
Characteristic Values
Characteristic Values
(T
(T
J
J
=25
=25
o
o
4100
0.05
C , unless otherwise specified)
290
110
C , unless otherwise specified)
typ.
110
150
200
250
typ.
3.0
4.2
50
3.0
50
30
35
50
50
50
60
35
max.
max.
0.85
1.75
250
220
2.40
650
4.0
0.50
2.5
8.0
K/W
K/W
K/W
Unit
Unit
mJ
mJ
mJ
mA
nC
pF
uA
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
A