pn100a-d75z Fairchild Semiconductor, pn100a-d75z Datasheet

no-image

pn100a-d75z

Manufacturer Part Number
pn100a-d75z
Description
Npn General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier
• Sourced from process 10.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V
V
V
I
T
Off Characteristics
BV
BV
BV
I
I
I
On Characteristics
h
V
V
Small Signal Characteristics
f
C
NF
C
CBO
CES
EBO
T
applications at collector currents to 300mA.
Symbol
FE
J
CEO
CBO
EBO
CE(sat)
BE(sat)
obo
, T
CBO
CEO
EBO
Symbol
stg
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emiitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
PN100/PN100A/MMBT100/MMBT100A
Parameter
T
C
=25°C unless otherwise noted
Parameter
T
C
=25°C unless otherwise noted
- Continuous
I
I
I
V
V
V
I
I
I
I
I
I
I
I
V
V
I
R
1. Emitter 2. Base 3. Collector
C
C
E
C
C
C
C
C
C
C
C
C
CB
CE
EB
CE
CB
G
= 10µA, I
= 10µA, I
= 1mA, I
= 100µA, V
= 10mA, V
= 100mA, V
= 150mA, V
= 10mA, I
= 200mA, I
= 10mA, I
= 200mA, I
= 100µA, V
= 2.0kΩ, f = 1.0KHz
= 4V
= 60V
= 40V
= 20V, I
= 5.0V, f = 1.0MHz
1
Mark: PN100/PN100A
Test Condition
B
C
E
B
B
C
= 0
CE
= 0
= 0
B
B
CE
CE
= 1.0mA
= 1.0mA
= 20mA
CE
CE
= 20mA
= 20mA
= 1.0V
= 1.0V
= 5.0V
= 1.0V*
= 5.0V *
TO-92
100
100A
100
100A
100
100A
100
100A
1. Base 2. Emitter 3. Collector
-55 ~ +150
Value
500
6.0
45
75
3
Min.
240
100
300
100
100
100
250
6.0
75
45
80
1
Mark: N1/N1A
Max.
0.85
450
600
350
0.2
0.4
1.0
4.5
5.0
4.0
50
50
50
SOT-23
2
Rev. B1, August 2006
Units
mA
°C
V
V
V
Units
MHz
nA
nA
nA
pF
dB
dB
V
V
V
V
V
V
V

Related parts for pn100a-d75z

pn100a-d75z Summary of contents

Page 1

... Current Gain Bandwidth Product T C Output Capacitance obo NF Noise Figure * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation 1 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A T =25°C unless otherwise noted C Parameter - Continuous T =25°C unless otherwise noted C Test Condition I = 10µ ...

Page 2

... R Thermal Resistance, Junction to Ambient θJA * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06." ©2002 Fairchild Semiconductor Corporation T =25°C unless otherwise noted A Parameter Max. Units PN100 *MMBT100 PN100A *MMBT100A 625 350 mW 5.0 2.8 mW/°C °C/W 83.3 °C/W 200 357 Rev. B1, August 2006 ...

Page 3

... I - COLLECTOR CURRENT (mA) C Figure 3. Base-Emitter Saturation Voltage vs Collector Current 60V AMBIE NT TEMP ERATURE ( C) A Figure 5. Collector Cutoff Current vs Ambient Temperature ©2002 Fairchild Semiconductor Corporation 0.4 Vce = 5V 0.3 0.2 0.1 100 200 300 500 1 Figure 2. Collector-Emitter Saturation Voltage 1 0.8 0.6 125 °C 0.4 β 0.2 ...

Page 4

... IB1 = IB2 = 150 cc 120 COLLECTOR CURRENT (mA) C Figure 7. Switching Times vs Collector Current ©2002 Fairchild Semiconductor Corporation (Continued) 700 t s 600 500 400 300 200 t r 100 0 100 200 300 0 TO-92 SOT- 100 ...

Page 5

... Package Dimensions 0.46 ±0.10 1.27TYP [1.27 ±0.20 ] ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ±0.20 ] 3.60 ±0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, August 2006 ...

Page 6

... Package Dimensions 0.40 ±0.03 2.90 ±0.03 0.95 1.90 ©2002 Fairchild Semiconductor Corporation (Continued) SOT-23 ±0.03 0.40 0.96~1.14 ±0.10 ±0.03 0.95 ±0.03 0.508REF 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. B1, August 2006 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

Related keywords