S10226 Hamamatsu Photonics, K.K.,, S10226 Datasheet
S10226
Related parts for S10226
S10226 Summary of contents
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... CMOS linear image sensor S10226 Small plastic package CMOS image sensor Features l Compact and high cost-performance Surface mount package: 2.4 × 9.1 × 1.6 l Pixel pitch: 7.8 µm Pixel height: 125 µm l Number of pixels: 1024 ch l Single 3.3 V power supply operation available ...
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... Max. - 800 f (CLK)/4 - Typ. Max. 400 to 1000 700 - 5 - 0.6 6 0.3 3 3.0 - 0.6 - 0 ±8.5 ST Trig GND Vdd EOS Vg SHIFT REGISTER CHARGE ADDRESS SWITCH AMP PHOTODIODE ARRAY S10226 Unit Unit kHz kHz Unit rms V % CLAMP Video CIRCUIT KMPDC0165EC ...
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... Configuration S10226 consists of a photosensitive area made 1024 pixel photodiode array, address switches for photodiode signal readout, a shift register for controlling the address switches, a charge amplifier for integrating charging current, a timing circuit for generating various timings, and a bias circuit. (See equivalent circuit below.) Each address switch is comprised of an N-channel MOS transistor using the photodiode cathode as the source, the charge amplifier input end as the drain, and the address pulse input from the shift register as the gate ...
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... CMOS linear image sensor Symbol Min. thw (ST) T1 × 4102 tr (ST), tf (ST) 0 tpw (CLK), T1 1.25 KMPDC0164EB tr (CLK), tf (CLK) 0 tvd - Vg GND Trig CLK ST EOS Vdd Video Tolerance unless otherwise noted: ±0.1 KMPDA0211EA S10226 KMPDC0164EB Typ. Max Unit µs ns µ ...
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... Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K. S10226 GND 150 200 250 300 350 ...