2sk1299s Renesas Electronics Corporation., 2sk1299s Datasheet
2sk1299s
Available stocks
Related parts for 2sk1299s
2sk1299s Summary of contents
Page 1
Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch ...
Page 2
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes ...
Page 3
Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown V (BR)DSS voltage Gate to source breakdown V (BR)GSS voltage Gate to source leak current I GSS Zero gate voltage drain current I DSS Gate to source cutoff ...
Page 4
Power vs. Temperature Derating 100 Case Temperature T C Typical Output Characteristics 4 3 Drain to ...
Page 5
Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Pulse Test 1 1 Gate to Source Voltage V (V) GS Static ...
Page 6
Body to Drain Diode Reverse Recovery Time 500 200 100 50 20 di/ 25°C GS Pulse Test 5 0.1 0.2 0 Reverse Drain Current I Dynamic ...
Page 7
Pulse Test Source to Drain Voltage V Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.1 0.03 0.01 10 100 1 m Switching Time Test Circuit ...
Page 8
Hitachi Code DPAK (L)-(1) JEDEC — EIAJ Conforms Weight (reference value) 0.42 g Unit: mm ...
Page 9
Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...