si4894bdy Vishay, si4894bdy Datasheet

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si4894bdy

Manufacturer Part Number
si4894bdy
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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si4894bdy-T1-E3
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si4894bdy-T1-GE3
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si4894bdy-T1-GE3
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2 500
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72993
S-72687-Rev. C, 24-Dec-07
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
Ordering Information: Si4894BDY-T1-E3 (Lead (Pb)-free)
(V)
S
S
S
G
1
2
3
4
0.016 at V
0.011 at V
Top View
r
SO-8
DS(on)
J
a
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 10 V
N-Channel 30-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
= 25 °C, unless otherwise noted
I
D
Steady State
Steady State
9.8
12
L = 0.1 mH
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
• 100 % R
Symbol
Symbol
T
R
G
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJF
GS
DS
AS
D
S
D
N-Channel MOSFET
stg
g
Tested
D
S
®
Power MOSFET
Typical
10 s
9.5
2.3
2.5
1.6
12
43
73
19
- 55 to 150
± 20
30
40
20
20
Steady State
Maximum
8.9
7.1
1.3
1.4
0.9
50
90
25
Vishay Siliconix
Si4894BDY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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si4894bdy Summary of contents

Page 1

... SO Top View Ordering Information: Si4894BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4894BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72993 S-72687-Rev. C, 24-Dec-07 New Product 2000 1600 1200 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 Si4894BDY Vishay Siliconix C iss 800 C 400 oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.4 1.2 1.0 ...

Page 4

... Si4894BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 75 100 125 150 100 r Limited* DS(on D(on) 1 Limited °C A 0.1 Single Pulse BV Limited DSS ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72993. Document Number: 72993 S-72687-Rev. C, 24-Dec-07 New Product Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4894BDY Vishay Siliconix 1 1 www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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