si4562dy Vishay, si4562dy Datasheet - Page 6

• Manufacturer Part Number: si4562dy
• Description: N- And P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Si4562DY
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
2-6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
–0.3
40
10
0.6
0.3
0.0
1
0.01
–50
0.1
0
2
1
10
–4
0.2
Source-Drain Diode Forward Voltage
–25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
V
T
SD
J
0.4
0
= 150_C
– Source-to-Drain Voltage (V)
I
D
Threshold Voltage
T
= 250 mA
J
– Temperature (_C)
25
0.6
10
50
–3
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
1.0
T
J
= 25_C
100
1.2
125
1.4
10
–2
Square Wave Pulse Duration (sec)
150
1.6
10
–1
0.10
0.08
0.06
0.04
0.02
30
24
18
12
0.01
0
6
0
0
On-Resistance vs. Gate-to-Source Voltage
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
1
V
1
DM
GS
JM
0.10
– T
– Gate-to-Source Voltage (V)
Single Pulse Power
t
1
A
= P
t
2
2
Time (sec)
DM
Z
thJA
thJA
t
t
1
2
(t)
1.00
S-54940—Rev. A, 29-Sep-97
= 62.5_C/W
Document Number: 70717
3
10
I
D
P-CHANNEL
= 6.2 A
4
10.00
30
5