si3200-x-gs Silicon Laboratories, si3200-x-gs Datasheet - Page 12

• Manufacturer Part Number: si3200-x-gs
• Description: Dual Programmable Cmos Slic With Line Monitoring
• Manufacturer: Silicon Laboratories

Table 8. DC Characteristics, V
(V
Si3232
12
Parameter
High Level Input
Voltage
Low Level Input Voltage
High Level Output
Voltage
Low Level Output
Voltage
SDITHRU Internal
Pullup Resistance
GPO Relay Driver
Source Impedance
GPO Relay Driver Sink
Impedance
Input Leakage Current
Note: All timing (except Rise and Fall time) is referenced to the 50% level of the waveform. Input test levels are V
Table 9. Switching Characteristics—General Inputs
(V
Parameter
Rise Time, RESET
RESET Pulse Width
RESET Pulse Width*, SDI Daisy Chain Mode
*Note: The minimum RESET pulse width assumes the SDITHRU pin is tied to ground via a pulldown resistor no greater than
DD
DD
, V
, V
DD1
0.4 V, V
DD1
10 kΩ per device.
–V
–V
DD4
DD4
IL
= 3.13 V to 3.47 V, T
=
=
0.4 V. Rise and Fall times are referenced to the 20% and 80% levels of the waveform.
3.13 to 3.47 V, T
*
Symbol
R
V
V
R
V
V
OUT
I
OH
OL
IH
L
IN
IL
A
A
DDA
=
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade, C
= V
BATSELa/b, GPOa/b:
V
V
SDO, INT, SDITHRU
DDD
DD1
DD1
Test Condition
I
Preliminary Rev. 0.96
I
O
I
I
–V
–V
O
O
O
I
= V
O
= –40 mA
= –4 mA
< 28 mA
< 85 mA
DD4
DD4
= 4 mA
CC
Symbol
= 3.13 V,
= 3.13 V,
= 3.3 V
t
t
t
rl
rl
r
Min
500
—
6
0.7 x
V
DD
Min
35
—
—
—
—
—
—
– 0.6
V
DD
Typ
—
—
—
L
Typ
=
50
63
—
—
—
—
—
11
—
20 pF)
Max
—
—
0.3 x
5
Max
3.47
0.72
±10
0.4
—
—
—
—
V
DD
IH
=
Unit
ns
ns
µs
V
Unit
kΩ
µA
DD
Ω
Ω
V
V
V
V
V
–