TSM4ND50 Taiwan Semiconductor Company, TSM4ND50 Datasheet

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TSM4ND50

Manufacturer Part Number
TSM4ND50
Description
500V N-Channel Power MOSFET
Manufacturer
Taiwan Semiconductor Company
Datasheet
Absolute Maximum Rating
Thermal Performance
Notes: Surface mounted on FR4 board t ≤ 10sec
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Peak Diode Recovery (Note 2)
Single Pulse Drain to Source Avalanche Energy (Note 3)
Total Power Dissipation @T
Operating Junction and Storage Temperature Range
General Description
The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Ordering Information
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
TSM4ND50CP RO
Low gate charge typical @ 12nC
Low Crss typical @ 10pF
Fast Switching
100% avalanche tested
Improved dv/dt capability
ESD Protection
Part No.
TO-252
Package
TO-252
C
=25
Pin Definition:
1. Gate
2. Drain
3. Source
o
C
(Ta=25
2,500pcs / 13” Reel
o
C unless otherwise noted)
Packing
1/8
PRODUCT SUMMARY
500V N-Channel Power MOSFET
V
DS
Symbol
Symbol
500
T
P
dv/dt
J
(V)
V
V
, T
E
I
DTOT
I
DM
I
DS
GS
D
S
AS
JC
JA
STG
N-Channel MOSFET
Block Diagram
2.7 @ V
R
-55 to +150
DS(on)
Limit
Limit
2.78
500
±30
120
100
4.5
12
45
GS
3
3
TSM4ND50
(Ω)
=10V
www.DataSheet4U.com
Version: B08
I
D
1.5
o
o
Unit
Unit
V/ns
C/W
C/W
(A)
mJ
o
W
V
V
A
A
A
C

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TSM4ND50 Summary of contents

Page 1

... Source General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge ...

Page 2

... 10V 25V 0V 1.0MHz V = 10V 1.5A 250V 4.7Ω 3A 40V 3A di/dt = 100A/us, T =150ºC J (See test circuit) DSS =25ºC J 2/8 TSM4ND50 www.DataSheet4U.com Min Typ Max BV 500 -- -- DSS R -- 2.3 2.7 DS(ON) V 3.0 -- 4.5 GS(TH DSS ±10 GSS ...

Page 3

... Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 500V N-Channel Power MOSFET o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/8 TSM4ND50 www.DataSheet4U.com Transfer Characteristics Gate Charge Version: B08 ...

Page 4

... Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 500V N-Channel Power MOSFET o ( unless otherwise noted) 4/8 TSM4ND50 www.DataSheet4U.com Threshold Voltage Version: B08 ...

Page 5

... Unclamped Inductive Load Test Circuit and Waveform Switching Time Test Circuits for Resistive Load Gate Charge Test Circuit 500V N-Channel Power MOSFET 5/8 TSM4ND50 www.DataSheet4U.com Version: B08 ...

Page 6

... Test Circuit for Inductive Load Switching and Diode Recovery Times 500V N-Channel Power MOSFET 6/8 TSM4ND50 www.DataSheet4U.com Version: B08 ...

Page 7

... Marking Diagram 500V N-Channel Power MOSFET SOT-252 Mechanical Drawing Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 7/8 TSM4ND50 www.DataSheet4U.com TO-252 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN A 2.3BSC 0.09BSC A1 4.6BSC 0.18BSC B 6 ...

Page 8

... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 500V N-Channel Power MOSFET Notice 8/8 TSM4ND50 www.DataSheet4U.com Version: B08 ...

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