BFU760F NXP Semiconductors, BFU760F Datasheet - Page 6

• Manufacturer Part Number: BFU760F
• Description: wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BFU760F
Product data sheet
Fig 4.
Fig 6.
www.DataSheet4U.net
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
250
200
150
100
50
0
0
f = 1 MHz, T
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
Collector-base capacitance as a function of
CE
= 1 V; T
1
amb
amb
= 25 °C.
= 25 °C.
2
(dB)
G
30
20
10
0
3
0
All information provided in this document is subject to legal disclaimers.
V
001aam865
CB
(V)
MSG
4
20
Rev. 1 — 29 April 2011
40
Fig 5.
(1)
(2)
(3)
(4)
(GHz)
NPN wideband silicon germanium RF transistor
fT
G
50
40
30
20
10
p(max)
0
60
0
V
Transition frequency as a function of collector
current; typical values
CE
001aam867
I
C
(mA)
= 1 V; f = 2 GHz; T
80
20
40
amb
= 25 °C.
60
BFU760F
© NXP B.V. 2011. All rights reserved.
001aam866
I
C
(mA)
80
6 of 12