BFP280W Siemens Semiconductor Group, BFP280W Datasheet - Page 3

• Manufacturer Part Number: BFP280W
• Description: NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
• Manufacturer: Siemens Semiconductor Group

1) G
Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain
I
Z
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
Semiconductor Group
C
C
C
C
L
CB
CE
EB
= 6 mA, V
= 3 mA, V
= 3 mA, V
= 1.5 mA, V
= Z
ms
= 0.5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
Lopt
= | S
21
CE
CE
CE
/ S
1)
CE
12
= 5 V, f = 500 MHz
= 5 V, Z
= 5 V, Z
|
= 5 V, Z
S
S
= Z
= Z
S
= Z
L
Sopt
= 50
Sopt
A
= 25°C, unless otherwise specified.
3
Symbol
f
C
C
C
F
G
| S
T
cb
ce
eb
ms
21e
|
2
min.
-
-
-
-
-
-
-
-
-
5
Values
typ.
7.5
0.24
0.27
0.27
1.5
2
18.5
15
15
11
max.
-
-
-
-
-
-
-
-
-
0.4
BFP 280W
Dec-12-1996
Unit
GHz
pF
dB