ATF-13736-STR Agilent(Hewlett-Packard), ATF-13736-STR Datasheet

ATF-13736-STR

Manufacturer Part Number

ATF-13736-STR

Description

2-16 GHz Low Noise Gallium Arsenide FET

Manufacturer

Agilent(Hewlett-Packard)

Datasheet

1.ATF-13736-STR.pdf (4 pages)

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Bonase Electronics (HK) Co., Limited

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2–16 GHz Low Noise

Gallium Arsenide FET

Technical Data

Features

• Low Noise Figure:

• High Associated Gain:

• High Output Power:

• Cost Effective Ceramic

• Tape-and-Reel Packaging

Electrical Specifications, T

Note:

1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.

Symbol

DSS

1.8 dB Typical at 12 GHz

9.0 dB Typical at 12 GHz

17.5 dB Typical at 12 GHz

Microstrip Package

Option Available

1 dB

Optimum Noise Figure: V

Gain @ NF

Power Output @ 1 dB Gain Compression:

1 dB Compressed Gain: V

Transconductance: V

Saturated Drain Current: V

Pinch-off Voltage: V

= 4 V, I

[1]

: V

= 40 mA

Parameters and Test Conditions

= 2.5 V, I

= 2.5 V, V

Description

The ATF-13736 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

housed in a cost effective

microstrip package. Its noise

figure makes this device appropri-

ate for use in the gain stages of

low noise amplifiers operating in

the 2-16 GHz frequency range.

This GaAs FET device has a

nominal 0.3 micron gate length

with a total gate periphery of

= 25 C

= 2.5 V, I

= 4 V, I

= 20 mA

= 2.5 V, V

= 1 mA

= 0 V

= 40 mA

= 20 mA

= 0 V

5-39

f = 8.0 GHz

f = 12.0 GHz

f = 14.0 GHz

f = 8.0 GHz

f = 12.0 GHz

f = 14.0 GHz

f =12.0 GHz dBm

f = 12.0 GHz

ATF-13736

36 micro-X Package

250 microns. Proven gold based

metallization systems and nitride

passivation assure a rugged,

reliable device.

mmho

Units Min.

-4.0

8.0

Typ. Max.

11.5

17.5

-1.5

5965-8722E

1.5

1.8

2.1

9.0

7.0

8.5

-0.5

2.2

Related parts for ATF-13736-STR

ATF-13736-STR Summary of contents

Page 1

... Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”. Description The ATF-13736 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropri- ate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range ...

Page 2

... GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number Devices Per Reel ATF-13736-TR1 1000 ATF-13736-STR ATF-13736 Noise Parameters: Freq GHz dB 4.0 1.1 6.0 1.3 8.0 1.5 12.0 1.8 14.0 2.1 ATF-13736 Typical Performance ...

Page 3

Typical Scattering Parameters, Freq GHz Mag. Ang. 2.0 .94 -46 11.0 3.0 .86 -70 10.2 4.0 .84 -90 5.0 .77 -110 6.0 .68 -135 7.0 .59 -170 8.0 .54 149 9.0 .56 112 10.0 .58 86 11.0 .60 ...

Page 4

Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 DRAIN 3 1 GATE 0.508 (0.020) SOURCE 2 1.45 0.25 2.54 (0.057 0.010) 0.15 0.05 (0.100) (0.006 0.002) 0.56 4.57 0.25 (0.022) 0.180 0.010 Notes: 1. Dimensions are in ...

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