SPD30N03 Infineon Technologies, SPD30N03 Datasheet
SPD30N03
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SPD30N03 Summary of contents
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... SIPMOS Power Transistor Features N channel Enhancement mode Avalanche rated rated 175˚C operating temperature Type Package SPD30N03 P-TO252 SPU30N03 P-TO251-3-1 Maximum Ratings ˚C, unless otherwise specified Parameter Continuous drain current ˚ 100 ˚C C Pulsed drain current ˚ ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics ˚C, unless otherwise ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Gate to drain charge ...
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... Data Sheet Drain current parameter: V SPD30N03 Transient thermal impedance thJC parameter : SPD30N03 65.0µ 100 µ ...
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... V 5.0 0.000 V DS Typ. forward transconductance = parameter 4.8 5 SPD 30N03 = SPD30N03 [ 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8 25˚ ...
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... SPD 30N03 = µ 140 ˚C -60 - 100 ) µ SPD30N03 ˚C typ 175 ˚C typ ˚C (98 175 ˚C (98 0.0 0.4 0.8 1.2 1.6 2.0 max typ min 200 T j 2 ...
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... Data Sheet Typ. gate charge ) parameter 120 140 ˚C 180 T j 140 ˚C 100 200 SPD 30N03 ) Gate = puls SPD30N03 V V 0,2 0 max max Gate 05.99 ...
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