HAT2096H Hitachi, HAT2096H Datasheet - Page 5

• Manufacturer Part Number: HAT2096H
• Description: Silicon N Channel Power MOS FET
• Manufacturer: Hitachi

0.20
0.16
0.12
0.08
0.04
-40
20
16
12
0
8
4
0
Static Drain to Source on State Resistance
Drain to Source Saturation Voltage vs.
Pulse Test
Gate to Source Voltage
V
GS
Case Temperature
4
0
10 V
Gate to Source Voltage
= 4.5 V
vs. Temperature
40
8
I
D
= 2 A, 5 A, 10 A
12
80
2 A, 5 A, 10 A
I
D
Tc
Pulse Test
= 10 A
V
5 A
120
2 A
16
GS
(°C)
(V)
160
20
100
100
50
20
10
0.3
0.1
30
10
2
1
5
Static Drain to Source on State Resistance
0.1
3
1
0.1
Pulse Test
0.2
Forward Transfer Admittance vs.
0.3
0.5
Drain Current
Tc = -25°C
Drain Current I
vs. Drain Current
Rev.2, Aug. 2002, page 5 of 10
1
V
1
GS
Drain Current
10 V
25°C
2
= 4.5 V
3
5
10
I
75°C
10
HAT2096H
V
Pulse Test
D
D
DS
20
(A)
(A)
= 10 V
30
50
100
100