HAT2096H Hitachi, HAT2096H Datasheet - Page 3

• Manufacturer Part Number: HAT2096H
• Description: Silicon N Channel Power MOS FET
• Manufacturer: Hitachi

Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage V
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 3. Pulse test
V
Qgs
Symbol Min
V
I
I
R
R
|y
Ciss
Coss
Crss
Qg
Qgd
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
30
± 20
—
—
1.0
—
—
30
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
4.2
7.0
50
2200
600
330
40
7
8
20
49
62
15
0.85
60
—
—
Max
—
—
± 10
1
2.5
5.3
10
—
—
—
—
—
—
—
—
—
1.11
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
nc
ns
ns
ns
ns
V
ns
pF
nc
nc
Rev.2, Aug. 2002, page 3 of 10
Test Conditions
I
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
V
R
Rg = 4.7 Ω
IF = 40 A, V
IF = 40 A, V
diF/ dt = 50 A/ µs
D
G
D
D
D
D
GS
DS
DS
DS
GS
DD
GS
GS
DD
L
= 10 mA, V
= 20 A, V
= 20 A, V
= 20 A, V
= 40 A
= ±100 µA, V
= 0.5 Ω
= 30 V, V
= 10 V, I
= 10 V
= ±16 V, V
= 0
= 10 V
= 10 V
= 10 V, I
≅ 10 V
HAT2096H
GS
GS
DS
GS
GS
D
GS
D
GS
= 10 V
= 4.5 V
= 10 V
= 20 A
= 0
= 0
DS
= 1 mA
DS
= 0
= 0
= 0
= 0
Note3
Note3
Note3
Note3