2N40G-TA3-T Unisonic Technologies, 2N40G-TA3-T Datasheet

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2N40G-TA3-T

Manufacturer Part Number
2N40G-TA3-T
Description
2 Amps, 400 Volts N-channel Power Mosfet
Manufacturer
Unisonic Technologies
Datasheet
2N40
2 Amps, 400 Volts
N-CHANNEL POWER MOSFET
UTC’ s advanced technology to provide customers with a minimum
on-state resistance, stable off–state characteristics and superior
switching performance. It also can withstand high energy pulse in
the avalanche.
applications, motor control circuits and switched mode power supply.
* High switching speed
* 2A, 400V, R
* 100% avalanche tested
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1.Gate
Note: Pin Assignment: G: Gate D: Drain
The UTC 2N40 is an N-channel mode power MOSFET using
The UTC 2N40 is usually used in general purpose switching
ORDERING INFORMATION
DESCRIPTION
FEATURES
SYMBOL
2N40L-TA3-T
Lead Free
DS(ON)
UNISONIC TECHNOLOGIES CO., LTD
=3.5Ω @ V
2.Drain
3.Source
Ordering Number
GS
=10V
2N40G-TA3-T
Halogen Free
Preliminary
S: Source
Package
TO-220
G
1
Pin Assignment
D
2
Power MOSFET
3
S
QW-R502-524.a
Packing
Tube
1 of 6

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2N40G-TA3-T Summary of contents

Page 1

... SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free 2N40L-TA3-T Note: Pin Assignment: G: Gate D: Drain www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Preliminary Package Halogen Free 2N40G-TA3-T TO-220 S: Source Power MOSFET Pin Assignment Packing Tube QW-R502-524.a ...

Page 2

... Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary (T =25°C, unless otherwise noted) C ...

Page 3

... Internal Source Inductance SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current Drain-Source Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary (T =25°C, unless otherwise specified) J SYMBOL ...

Page 4

... TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit 12V 200nF 50kΩ 300nF V GS 3mA Unclamped Inductive Switching Test Circuit 10V t P UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary V GS Same Type as DUT 10V V DS DUT Unclamped Inductive Switching Waveforms BV DSS DUT V ...

Page 5

... TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms dv/dt controlled (Driver (DUT (DUT) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary + DUT Driver Same Type as DUT G controlled by pulse period Gate Pulse Width D= Gate Pulse Period ...

Page 6

... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary Power MOSFET QW-R502-524 ...

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