2SJ244 Hitachi Semiconductor, 2SJ244 Datasheet - Page 5

• Manufacturer Part Number: 2SJ244
• Description: Silicon P-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2000
1000
-25
-15
-20
-10
100
500
200
-5
50
20
0
-0.1
Pulse Test
I
Dynamic Input Characteristics
D
Reverse Recovery Time vs.
-0.2
= -4 A
Reverse Drain Current
2
V
Reverse Drain Current
Gate Charge
DD
= -10 V
-0.5
-5 V
4
-1.0
-5 V
Qg
V
di/dt = 10 A/µs
PW = 10 µs
V
6
GS
DS
-2
( nc )
V
I
DD
DR
= -10 V
8
(A)
-5
10
-10
-10
-8
-6
-4
-2
0
2000
1000
1000
100
200
500
200
100
500
50
20
10
20
50
-0.1
-0.1
Switching Time vs. Drain Current
tf
-0.2
-0.2
Drain to Source Voltage V
Typical Capacitance vs.
Drain to Source Voltage
tr
td(off)
td(on)
Drain Current
-0.5
-0.5
Coss
V
PW = 2 µs, Duty Cycle = 1 %
Crss
Ciss
GS
-1.0
-1.0
= - 4 V, V
-2
I
-2
D
DD
(A)
DS
= - 10 V
(V)
V
f = 1 MHz
-5
GS
-5
= 0
2SJ244
-10
-10
5