SI4470EY Vishay Siliconix, SI4470EY Datasheet
SI4470EY
Available stocks
Related parts for SI4470EY
SI4470EY Summary of contents
Page 1
... SO Top View Ordering Information: Si4470EY Si4470EY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction) ...
Page 2
... Si4470EY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
Page 3
... Source-to-Drain Voltage (V) SD Document Number: 71606 S-03951—Rev. B, 26-May-03 4000 3500 3000 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si4470EY Vishay Siliconix Capacitance C iss C rss C oss 500 Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...
Page 4
... Si4470EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 0.6 = 250 0.2 - 0.2 - 0.6 - 1 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...