2SK1948 Hitachi Semiconductor, 2SK1948 Datasheet - Page 6

• Manufacturer Part Number: 2SK1948
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1948
6
5000
2000
1000
500
400
300
200
100
500
200
100
50
0
1
V
V
Dynamic Input Characteristics
DD
DS
Reverse Drain Current I
Body to Drain Diode Reverse
2
80
= 200 V
Gate Charge Qg (nc)
di/dt = 100 A/ s, V
Ta = 25°C
100 V
50 V
Recovery Time
5
160
V
DD
V
10
GS
= 200 V
100 V
240
50 V
20
I = 50 A
D
GS
320
DR
= 0
50
(A)
400
100
20
16
12
8
4
0
10000
1000
1000
100
100
500
200
10
50
20
10
0
0.5
Drain to Source Voltage V
V
f = 1 MHz
GS
1
Typical Capacitance vs.
10
Drain to Source Voltage
= 0
Switching Characteristics
V
PW = 5 s
t
Drain Current I
f
GS
2
= 10 V, V
20
t (off)
d
5
30
DD
10
D
=
:
Ciss
Coss
Crss
t
t (on)
r
d
(A)
30 V
40
DS
20
(V)
50
50