SI2331DS Vishay Siliconix, SI2331DS Datasheet - Page 2

• Manufacturer Part Number: SI2331DS
• Description: P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

SPICE Device Model Si2331DS
Vishay Siliconix
Notes
a. Pulse test; pulse width
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
Parameter
a
a
300 s, duty cycle
a
J
= 25 C UNLESS OTHERWISE NOTED)
a
2%.
Symbol
V
r
I
t
DS(on)
t
V
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
SD
fs
gs
gd
r
f
g
V
DS
I
D
= 6 V, V
V
V
V
V
V
V
1 A, V
Test Conditions
DS
GS
GS
GS
I
DS
V
DS
S
DD
= 1.6 V, V
= 5 V, V
= 2.5 V, I
= 1.8 V, I
= 4.5 V, I
= V
= 5 V, I
= 6 V, R
GEN
GS
GS
, I
= 4.5 V, I
= 10 V, R
D
D
GS
= 250 A
D
D
D
=
GS
L
= 4.5 V
= 3.6 A
= 3.2
= 2.7
= 6
= 0 V
3.6 A
D
G
= 3.6 A
= 6
Simulated
Data
0.035
0.046
0.062
0.72
0.80
8.2
1.3
2.5
94
14
20
21
66
15
Measured
Data
0.038
0.049
0.070
Document Number: 72307
1.3
2.5
20
35
65
50
3
9
Unit
nC
30-Apr-04
ns
V
A
S
V