IRF7507 International Rectifier, IRF7507 Datasheet - Page 6
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IRF7507
Manufacturer Part Number
IRF7507
Description
Power MOSFET(Vdss=+-20V)
Manufacturer
International Rectifier
Datasheet
1.IRF7507.pdf
(8 pages)
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IRF7507
Fig 17. Typical On-Resistance Vs. Gate
6
Fig 19. Typical Capacitance Vs.
0.300
0.250
0.200
0.150
0.100
500
400
300
200
100
0
1
Drain-to-Source Voltage
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
2
C
C
C
-V
is s
o s s
rs s
-V
3
D S
GS
V
C
C
C
, D rain-to-S ource V oltage (V )
G S
iss
rs s
oss
, Gate-to-Source Voltage (V)
1000
100
0.1
10
0.00001
4
= 0 V ,
= C
= C
= C
1
Voltage
D = 0.50
gs
g d
ds
0.20
0.10
0.05
0.02
0.01
+ C
+ C
ID = -1.7A
10
5
gd
gd
f = 1 M H z
, C
6
(THERMAL RESPONSE)
0.0001
ds
SINGLE PULSE
S H O R TE D
7
8
100
0.001
A
t , Rectangular Pulse Duration (sec)
1
N-P - Channel
P - Channel
0.01
0.1
Fig 18. Maximum Safe Operating Area
100
0.1
1 0
10
1. Duty factor D = t / t
2. Peak T = P
8
6
4
2
0
Notes:
1
Fig 20. Typical Gate Charge Vs.
0
1
T
T
Single Pulse
I
V
D
C
J
D S
= 25 C
= 150 C
= -1.2A
1
J
= -16V
-V
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
DS
°
Q , Total G ate C h arge (nC )
DM
2
°
G
, Drain-to-Source Voltage (V)
x Z
1
thJA
P
2
DM
4
BY R
+ T
10
A
t
1
10
DS(on)
t
2
FOR TES T C IR C U IT
6
SE E FIG U R E 19
100us
1ms
10ms
100
www.irf.com
8
100
1 0
A