BAV102-BAV103 NXP Semiconductors, BAV102-BAV103 Datasheet - Page 4

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BAV102-BAV103

Manufacturer Part Number
BAV102-BAV103
Description
Single General-purpose Switching Diodes
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BAV102_BAV103_3
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Reverse current as a function of junction
( A)
(1) T
(2) T
(3) T
I
(mA)
R
10
10
600
I
400
200
F
10
10
10
0
1
3
2
1
2
voltage
V
Solid line: maximum values
Dotted line: typical values
temperature
0
0
amb
amb
amb
R
= V
= 150 C; typical values
= 25 C; typical values
= 25 C; maximum values
Rmax
(1)
100
1
(2)
T
V
j
F
( C)
(3)
(V)
mbg459
mgd009
200
Rev. 03 — 16 August 2007
2
Fig 2. Non-repetitive peak forward current as a
Fig 4. Diode capacitance as a function of reverse
I
(pF)
FSM
(A)
C
10
10
d
1.6
1.4
1.2
1.0
0.8
10
1
2
1
Based on square wave currents.
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
1
0
j
= 25 C; prior to surge
Single general-purpose switching diodes
10
amb
BAV102; BAV103
= 25 C
10
10
2
V
10
R
© NXP B.V. 2007. All rights reserved.
3
(V)
t
p
( s)
mbg703
mgd005
10
20
4
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