PBLS4003Y Philips Semiconductors, PBLS4003Y Datasheet - Page 3

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PBLS4003Y

Manufacturer Part Number
PBLS4003Y
Description
40 V PNP BISS loadswitch
Manufacturer
Philips Semiconductors
Datasheets

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Philips Semiconductors
5. Limiting values
6. Thermal characteristics
9397 750 13457
Product data sheet
Table 6:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 7:
[1]
[2]
Symbol
TR1; PNP: low V
V
V
V
I
I
I
I
P
TR2; NPN: resistor-equipped transistor
V
V
V
V
I
I
P
Per device
P
T
T
T
Symbol
Per device
R
C
CM
B
BM
O
CM
stg
j
amb
CBO
CEO
EBO
tot
CBO
CEO
EBO
I
tot
tot
th(j-a)
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current
peak base current
total power dissipation
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
total power dissipation
storage temperature
junction temperature
ambient temperature
Parameter
thermal resistance from
junction to ambient
positive
negative
SOT363
SOT666
CEsat
transistor
Rev. 01 — 6 December 2004
PBLS4003Y; PBLS4003V
Conditions
open emitter
open base
open collector
t
t
T
open emitter
open base
open collector
T
p
p
amb
amb
Conditions
in free air
1 ms;
1 ms;
25 C
25 C
0.02
0.02
[1] [2]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
[1]
[1]
40 V PNP BISS loadswitch
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
65
65
Typ
-
-
Max
200
50
50
10
100
100
200
300
150
40
40
6
500
1
50
100
40
10
150
150
Max
416
416
Unit
V
V
V
mA
A
mA
mA
mW
V
V
V
V
V
mA
mA
mW
mW
C
C
C
Unit
K/W
K/W
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