NSTB60ADW1T1 ON Semiconductor, NSTB60ADW1T1 Datasheet - Page 2

• Manufacturer Part Number: NSTB60ADW1T1
• Description: Small Signal Bias Resistor Transistor SC88, (SOT363) Complimentary NPN & PNP 50V, Package: SC-88 (SOT-363), Pins=6
• Manufacturer: ON Semiconductor

3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
Q
Q
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage (I
Collector–Base Cutoff Current (V
Emitter–Base Cutoff Current (V
Collector-Emitter Saturation Voltage
DC Current Gain (V
Transition Frequency
Output Capacitance (V
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage
Collector–Base Cutoff Current (V
Collector–Emitter Cutoff Current (V
Emitter–Base Cutoff Current (V
Collector-Emitter Saturation Voltage
DC Current Gain (V
Output Voltage (on) (V
Output Voltage (off) (V
Input Resistor (Note 3)
Resistor Ratio (Note 3)
1
2
(I
(I
(V
(I
(I
C
C
C
C
CE
= –1.0 mAdc, I
= –50 mAdc, I
= 1.0 mA, I
= 10 mA, I
= –12 Vdc, I
B
B
= 5.0 mA) (Note 3)
= 0) (Note 3)
B
CE
CE
C
B
= –5.0 mAdc) (Note 3)
= –2.0 mAdc, f = 100 MHz)
= 0)
CC
CC
= –10 V, I
CB
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= –12 Vdc, I
Characteristic
EB
EB
C
C
CB
CB
= 5.0 mA) (Note 3)
= –6.0 Vdc, I
= –5.0 mA) (Note 3)
= 6.0 V, I
CE
B
B
E
= –50 Vdc, I
= 50 V, I
C
C
= 4.0 V, R
= 0.25 V, R
= –50 mAdc, I
E
= 50 V, I
= –50 Adc, I
= 50 A, I
= 0 Adc, f = 1.0 MHz)
(T
A
C
E
= 25 C unless otherwise noted)
= 0)
= 0)
B
B
L
E
= 0)
L
E
= 0)
= 1.0 kW) (Note 3)
= 0)
= 1.0 kW) (Note 3)
= 0)
E
E
= 0)
= 0)
NSTB60ADW1T1
http://onsemi.com
2
V
V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)CBO
(BR)CEO
R1/R2
(BR)EBO
I
CE(sat)
I
I
CE(sat)
I
C
I
V
V
h
h
CBO
EBO
CBO
CEO
EBO
R1
f
OH
FE
OB
FE
OL
T
–6.0
32.9
3.76
Min
–50
–50
120
4.9
50
50
40
–
–
–
–
–
–
–
–
–
–
Typ
140
3.5
4.7
47
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
–0.1
–0.1
–0.5
0.15
0.25
61.1
5.64
560
100
500
0.2
–
–
–
–
–
–
–
–
–
mAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
k
mA
mA
pF
–