2SB536 Quanzhou Jinmei Electronic, 2SB536 Datasheet - Page 2

• Manufacturer Part Number: 2SB536
• Description: Silicon PNP Power Transistors
• Manufacturer: Quanzhou Jinmei Electronic

JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
40-80
V
V
(BR)CEO
h
h
I
I
C
CEsat
BEsat
CBO
EBO
h
FE-1
FE-2
N
f
OB
T
FE-2
Classifications
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
60-120
M
PARAMETER
80-160
L
120-250
K
I
I
I
V
V
I
I
I
I
C
C
C
C
C
E
C
CB
EB
=-10mA; I
=-1A; I
=-1A; I
=-5mA ; V
=-0.3A ; V
=0 ; V
=-0.1A ; V
=-120V; I
=-3V; I
2
CB
B
B
CONDITIONS
=-0.1A
=-0.1A
=-10V; f=1MHz
C
=0
B
CE
CE
CE
=0
E
=0
=-5V
=-5V
=-5V
-120
MIN
Product Specification
25
40
TYP.
35
40
2SB536
MAX
-2.0
-1.5
-1.0
-1.0
250
UNIT
MHz
μA
μA
pF
V
V
V