HY29LV400 Hynix Semiconductor, HY29LV400 Datasheet - Page 30

• Manufacturer Part Number: HY29LV400
• Description: 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
• Manufacturer: Hynix Semiconductor

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Addresses
HY29LV400
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
2. Commands shown are for Word mode operation.
3. V
AC CHARACTERISTICS
30
RY/BY#
D
CC
OUT
W E #
Data
O E #
C E #
shown only to illustrate t
V
is the true data at the read address.(0xFF after an erase operation).
C C
t
V C S
Erase Command Sequence (last two cycles)
t
C S
0x2AA
t
t
D S
W C
t
t
Figure 20. Sector/Chip Erase Operation Timings
G H W L
W P
0x55
VCS
measurement references. It cannot occur as shown during a valid command sequence.
t
C H
t
W P H
t
t
D H
A S
SA
t
B U S Y
t
0x30
A H
Address = 0x555
for chip erase
Data = 0x10
for chip erase
t
W H W H 2
t
W H W H 3
V A
Read Status Data (last two cycles)
or
Status
V A
D
O U T
t
R B
Rev. 1.0/Nov. 01