Si7336DP Vishay Intertechnology, Si7336DP Datasheet - Page 2

• Manufacturer Part Number: Si7336DP
• Description: N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7336DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
60
50
40
30
20
10
0
0
b
Parameter
V
GS
2
V
= 10 thru 4 V
a
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
4
a
a
6
Symbol
3 V
J
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
V
C
C
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
= 25_C UNLESS OTHERWISE NOTED)
t
oss
t
SD
rss
t
iss
rr
fs
gs
gd
r
f
g
g
8
10
New Product
V
V
V
I
DS
D
DS
DS
^ 1 A, V
I
= 15 V, V
F
V
= 30 V, V
= 15 V, V
V
V
V
V
V
V
V
DS
= 2.9 A, di/dt = 100 A/ms
V
I
DS
DS
Test Condition
S
DS
GS
GS
DD
DD
DS
= 2.9 A, V
= 0 V, V
= V
w 5 V, V
= 30 V, V
= 10 V, I
= 15 V, R
= 15 V, R
= 4.5 V, I
= 15 V, I
GEN
GS
GS
GS
GS
, I
= 10 V, R
GS
= 4.5 V, I
= 0 V, T
= 0 V, f = 1 MHz
D
GS
GS
D
GS
D
L
L
= 250 mA
D
= "20 V
= 25 A
= 15 W
= 15 W
= 19 A
= 25 A
= 10 V
= 0 V
= 0 V
J
G
D
= 55_C
60
50
40
30
20
10
= 20 A
= 6 W
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
1.0
0.8
30
1.5
2.0
0.0026
0.0033
T
Typ
5600
0.72
16.5
860
415
C
110
8.5
1.3
32
24
16
90
32
45
S-32038—Rev. B, 13-Oct-03
25_C
= 125_C
Document Number: 72415
2.5
0.00325
0.0042
Max
"100
140
3.0
1.1
2.0
50
35
25
50
70
3.0
1
5
3.5
−55_C
Unit
nC
nA
mA
mA
pF
ns
W
W
W
V
A
S
V
4.0