Si7336DP Vishay Intertechnology, Si7336DP Datasheet
Si7336DP
Manufacturer Part Number
Si7336DP
Description
N-channel 30-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7336DP.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si7336DP-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7336DP-T1-E3
Manufacturer:
SHARP
Quantity:
1 000
Part Number:
Si7336DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72415
S-32038—Rev. B, 13-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
ti
t A bi
8
Ordering Information: Si7336DP-T1
6.15 mm
D
0.00325 @ V
J
J
a
a
0.0042 @ V
= 150_C)
= 150_C)
t
a
a
7
D
Parameter
Parameter
r
DS(on)
6
D
PowerPAK SO-8
a
a
GS
Bottom View
5
GS
(W)
N-Channel 30-V (D-S) MOSFET
D
= 4.5 V
= 10 V
a
1
S
2
S
3
A
S
5.15 mm
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 1.0 mH
T
T
T
T
t v 10 sec
4
A
A
A
A
G
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
30
27
(A)
Symbol
Symbol
T
R
R
R
V
J
V
I
I
P
P
DM
, T
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
D
D
stg
FEATURES
D Ultra-Low On-Resistance Using High Density
D Q
D New Low Thermal Resistance PowerPAKr Package
D 100% R
APPLICATIONS
D Low-Side DC/DC Conversion
D Synchronous Rectifier, POL
TrenchFETr Gen II Power MOSFET Technology
with Low 1.07-mm Profile
− Notebook
− Server
− Workstation
g
Optimized
10 secs
Typical
G
g
4.5
5.4
3.4
1.0
30
25
18
50
Tested
N-Channel MOSFET
−55 to 150
"20
30
70
50
D
S
Steady State
Maximum
Vishay Siliconix
1.8
1.9
1.2
1.5
18
15
23
65
Si7336DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1
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