STPS2530C STMicroelectronics, STPS2530C Datasheet

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STPS2530C

Manufacturer Part Number
STPS2530C
Description
Low Drop Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet

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STPS2530CG
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STPS2530CG-TR
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Table 1: Main Product Characteristics
FEATURES AND BENEFITS
DESCRIPTION
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC con-
verters.
Packaged in D
use in low voltage high frequency inverters, free
wheeling and polarity protection applications.
Table 3: Absolute Ratings (limiting values, per diode)
April 2005
* :
Symbol
I
V
F(RMS)
P
I
dV/dt
I
I
dPtot
---------------
I
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop for higher efficiency
Low thermal resistance
F(AV)
T
RRM
RSM
FSM
RRM
dTj
ARM
T
stg
j
>
V
------------------------- -
Rth j a
V
F
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward voltage
Average forward current
Surge non repetitive forward current
Peak repetitive reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated V
T
(
1
j
2
)
PAK, this device is intended for
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
2 x 12.5 A
0.45 V
150°C
30 V
T
δ = 0.5
c
Parameter
= 140°C
REV. 1
Per diode
Per device
t
t
t
t
Table 2: Order Codes
p
p
p
p
= 2 µs square F=1kHz
= 100 µs square
= 10ms sinusoidal
= 1µs T
R
STPS2530CG-TR
, T
Part Numbers
STPS2530CG
j
= 25°C)
j
= 25°C
K
D
2
PAK
STPS2530C
A1
-65 to + 150
A2
STPS2530CG
STPS2530CG
10000
Value
3000
12.5
180
150
30
30
25
Marking
1
2
V/µs
Unit
°C
°C
W
V
A
A
A
A
A
1/5

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STPS2530C Summary of contents

Page 1

... F=1kHz 100 µs square 1µ 25° REV. 1 STPS2530C PAK Marking STPS2530CG STPS2530CG Value 30 30 12.5 25 180 25°C 3000 j - 150 150 10000 Unit °C °C V/µs ...

Page 2

... STPS2530C Table 4: Thermal Parameters Symbol R Junction to case th(j-c) R Coupling th(c) When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode (Per diode) + P(diode th(j-c) Table 5: Static Electrical Characteristics (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F δ Pulse test ms, < ...

Page 3

... C(pF) 10.0 1.0 0 Figure 10: Thermal resistance junction to am- bient versus copper surface under tab (epoxy printed board FR4 35µm) R th(j- 0.8 1.0 1.2 0 STPS2530C 6: Relative variation of /R th(j-c) t (s) p δ =tp/T 1.E-02 1.E- (°C/W) S(mm² thermal ...

Page 4

... PAK Package Mechanical Data FLAT ZONE NO LESS THAN 2mm Figure 12:Foot Print Dimensions (in millimeters) 16.90 10.30 3.70 8.90 Table 6: Ordering Information Ordering type Marking STPS2530CG STPS2530CG STPS2530CG-TR STPS2530CG ■ Epoxy meets UL94, V0 Table 7: Revision History Date Revision 16-Apr-2005 4/5 REF ...

Page 5

... All other names are the property of their respective owners Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STPS2530C 5/5 ...

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