STGB3NB60K ST Microelectronics, STGB3NB60K Datasheet - Page 2

• Manufacturer Part Number: STGB3NB60K
• Description: (STGP3NB60K / STGB3NB60K) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
• Manufacturer: ST Microelectronics

STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
ABSOLUTE MAXIMUM RATINGS
(
(1) For “D” version only
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
2/14
n
) Pulse width limited by safe operating area
Symbol
Rthj-case
I
Rthj-amb
V
I
Symbol
V
V
CM
P
V
fm
V
I
V
V
Rthc-h
T
BR(CES)
f
CES
ECR
TOT
I
I
CE(sat)
ISO
T
I
I
GE
(1)
stg
GE(th)
C
C
GES
CES
(1)
j
(
n
)
Collector-Emitter Voltage (V
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuos) at T
Collector Current (continuos) at T
Collector Current (pulsed)
Forward Current
Forward Current Pulsed
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage A.C.
Storage Temperature
Max. Operating Junction Temperature
Collector-Emitter Breakdown
Voltage
Collector cut-off
(V
Gate-Emitter Leakage
Current (V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
GE
= 0)
Parameter
CE
= 0)
C
Parameter
= 25°C
GS
= 0)
C
C
I
V
V
V
V
V
V
= 25°C
= 100°C
C
CE
CE
GE
CE
GE
GE
= 250 µA, V
= Max Rating, T
= Max Rating, T
= V
= ±20V , V
= 15V, I
= 15V, I
Test Conditions
GE
, I
C
C
C
= 3 A
= 3 A, Tj =125°C
GE
= 250µA
CE
= 0
= 0
C
C
= 25 °C
= 125 °C
TO-220
D
TO-220
D
2
2
1.8
PAK
24
68
PAK
6
3
--
62.5
Min.
600
– 55 to 150
5
TO-220FP
TO-220FP
Value
0.75
600
±20
150
0.5
20
24
3
2500
5
24
25
6
3
Typ.
2.3
1.9
DPAK
DPAK
100
2.1
Max.
±100
500
24
60
2.8
50
--
6
3
7
°C/W
W/°C
°C/W
°C/W
Unit
Unit
µA
µA
°C
nA
W
V
V
V
A
A
A
A
A
V
V
V
V
V